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1
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0029290956
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Fatigue-free ferroelectric capacitors with platinum electrodes
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CA.Araujo, J.D.Cuchiaro, L.D.McMillan, M.C.Scott and J.F.Scott, "Fatigue-free ferroelectric capacitors with platinum electrodes" NATURE, vol.374, no.13, pp.627-629, 1995
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(1995)
NATURE
, vol.374
, Issue.13
, pp. 627-629
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Araujo, C.A.1
Cuchiaro, J.D.2
McMillan, L.D.3
Scott, M.C.4
Scott, J.F.5
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2
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18544401526
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Novel Stacked Capacitor Technology for 1Gbit DRAMs with CVD-(Ba,Sr)TiO3 Thin Films on a Thick Stage Node of Ru
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A.Yuuki, M.Yamamura, T.Horikawa, T.Shibano, N.Hirano, H.Maeda, N.Mikami, K.Ono, H.Ogata, and H.Abe, "Novel Stacked Capacitor Technology for 1Gbit DRAMs with CVD-(Ba,Sr)TiO3 Thin Films on a Thick Stage Node of Ru" IEDM Tech.Digest., pp.115-118, 1995
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(1995)
IEDM Tech.Digest.
, pp. 115-118
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Yuuki, A.1
Yamamura, M.2
Horikawa, T.3
Shibano, T.4
Hirano, N.5
Maeda, H.6
Mikami, N.7
Ono, K.8
Ogata, H.9
Abe, H.10
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3
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0029543660
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Giga-bit Scale DRAM Cell with New Simple Ru/(Ba,Sr)TiO3/Ru Stacked Capacitor Using X-ray Lithography
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Y.Nishioka, K.Shiozawa, T.Oishi, K.Kanamoto, Y.Tokuda, H.Sumitani, S.Aya, H.Yabe, K.Itoga, T.Hifumi, K.Marumoto, T.Kuroiwa, T.Kawahara, K.Nishikawa, T.Oomori, T.Fujino, S.Yamamoto, S.Uzawa, M.Kimata, M.Nunoshita, and H. Abe, "Giga-bit Scale DRAM Cell with New Simple Ru/(Ba,Sr)TiO3/Ru Stacked Capacitor Using X-ray Lithography" IEDM Tech. Digest., pp.903-906, 1995
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(1995)
IEDM Tech. Digest.
, pp. 903-906
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-
Nishioka, Y.1
Shiozawa, K.2
Oishi, T.3
Kanamoto, K.4
Tokuda, Y.5
Sumitani, H.6
Aya, S.7
Yabe, H.8
Itoga, K.9
Hifumi, T.10
Marumoto, K.11
Kuroiwa, T.12
Kawahara, T.13
Nishikawa, K.14
Oomori, T.15
Fujino, T.16
Yamamoto, S.17
Uzawa, S.18
Kimata, M.19
Nunoshita, M.20
Abe, H.21
more..
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4
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0029491604
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An ECR MOCVD (Ba,Sr)TiO3 based stacked capacitor technology with Ru02/Ru/TiN/TiSix storage nodes for Gbit-scale DRAMs
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S.Yamamichi, P.Y.Lesaicherre, H.Yamaguchi, K.Takemura, S.Sone, H.Yabuta, K.Sato, T.Tamura, K.Nakajima, S.Ohnishi, K.Tokashiki, Y.Hayashi, Y.Kato, Y.Miyasaka, M.Yoshida, and H.Ono, " An ECR MOCVD (Ba,Sr)TiO3 based stacked capacitor technology with Ru02/Ru/TiN/TiSix storage nodes for Gbit-scale DRAMs" EDM Tech. Digest., pp.119-122, 1995
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(1995)
EDM Tech. Digest.
, pp. 119-122
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Yamamichi, S.1
Lesaicherre, P.Y.2
Yamaguchi, H.3
Takemura, K.4
Sone, S.5
Yabuta, H.6
Sato, K.7
Tamura, T.8
Nakajima, K.9
Ohnishi, S.10
Tokashiki, K.11
Hayashi, Y.12
Kato, Y.13
Miyasaka, Y.14
Yoshida, M.15
Ono, H.16
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5
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0027879314
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Platinum Etching and Plasma Characteristics in RF Magnetron and Electron Cyclotron Resonance Plasmas
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DEC.
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K.Nishikawa, Y.Kusumi, T.Oomori, M.Hanazaki, and K.Namba, "Platinum Etching and Plasma Characteristics in RF Magnetron and Electron Cyclotron Resonance Plasmas" JJAP, vol.32, no.12b, pp.6102-6108, DEC.1993
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(1993)
JJAP
, vol.32
, Issue.12 B
, pp. 6102-6108
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Nishikawa, K.1
Kusumi, Y.2
Oomori, T.3
Hanazaki, M.4
Namba, K.5
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7
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0342957447
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Electrical Properties of Pb(Zr0.53 Ti0.47)03 Thin Film Capacitors with Modified RuO2 Bottom Electrodes
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Mar.
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H.N.Al-Shareef, K.R. Bellur, O.Auciello and A.I.Kingon, "Electrical Properties of Pb(Zr0.53 Ti0.47)03 Thin Film Capacitors with Modified RuO2 Bottom Electrodes" Proceedings of the Sixth International Symposium on Integrated Ferroelectrics, vol.8, pp151-163, Mar.1994
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(1994)
Proceedings of the Sixth International Symposium on Integrated Ferroelectrics
, vol.8
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Al-Shareef, H.N.1
Bellur, K.R.2
Auciello, O.3
Kingon, A.I.4
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8
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0028508274
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Preparation and Properties of Ru and Ru02 Thin Film Electrodes for Ferroelectric Thin Films
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Sept.
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H.Maiwa, N.Ichionose and K.Okazaki, "Preparation and Properties of Ru and Ru02 Thin Film Electrodes for Ferroelectric Thin Films" JJAP, vol.33, no.9b, pp.5223-5226, Sept. 1994
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(1994)
JJAP
, vol.33
, Issue.9 B
, pp. 5223-5226
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Maiwa, H.1
Ichionose, N.2
Okazaki, K.3
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9
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0028512460
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Preparation of Pb(Zr,Ti)03 Thin Films on Ir and IrO2 Electrodes
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Sept.
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T.Nakamura, Y.Nakao, A.Kamisawa and H.Takasu, "Preparation of Pb(Zr,Ti)03 Thin Films on Ir and IrO2 Electrodes" JJAP, vol.33, no.9b, pp.5207-5210, Sept. 1994
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(1994)
JJAP
, vol.33
, Issue.9 B
, pp. 5207-5210
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Nakamura, T.1
Nakao, Y.2
Kamisawa, A.3
Takasu, H.4
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10
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0028115217
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A 256kb Nonvolatile Ferroelectric Memory at 3V and 100ns
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Feb.
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T.Sumi, N.Moriwaki, G.Nakane, T.Nakakuma, Y.Judai, Y.Uemoto, Y.Nagano, S.Hayashi, M.Azuma, E.Fujii, S.Katsu, T.Otsuki, L.McMillan, C.A.Paz de Araujo and G. Kano, "A 256kb Nonvolatile Ferroelectric Memory at 3V and 100ns" ISSCC Dig. of Tech. Papers, pp.268-269, Feb., 1994
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(1994)
ISSCC Dig. of Tech. Papers
, pp. 268-269
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Sumi, T.1
Moriwaki, N.2
Nakane, G.3
Nakakuma, T.4
Judai, Y.5
Uemoto, Y.6
Nagano, Y.7
Hayashi, S.8
Azuma, M.9
Fujii, E.10
Katsu, S.11
Otsuki, T.12
McMillan, L.13
Paz De Araujo, C.A.14
Kano, G.15
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11
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0030084512
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A 60ns 1Mb Nonvolatile Ferroelectric Memory with Non-Driven Cell Plate Line Write/Read Scheme
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Feb.
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H.Koike, T.Otsuki, T.Kimura, M.Fukumura, Y.Hayashi, Y.Maejima, K.Amanuma, N.Tanabe, T.Matsuki, S.Saito, T.Takeuchi, S.Kobayashi, T.Kunio, T.Hase, Y.Miyasaka, N.Shohata, M.Takeda, "A 60ns 1Mb Nonvolatile Ferroelectric Memory with Non-Driven Cell Plate Line Write/Read Scheme" ISSCC Digest of Technical Papers, pp.368-369, Feb. 1996
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(1996)
ISSCC Digest of Technical Papers
, pp. 368-369
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-
Koike, H.1
Otsuki, T.2
Kimura, T.3
Fukumura, M.4
Hayashi, Y.5
Maejima, Y.6
Amanuma, K.7
Tanabe, N.8
Matsuki, T.9
Saito, S.10
Takeuchi, T.11
Kobayashi, S.12
Kunio, T.13
Hase, T.14
Miyasaka, Y.15
Shohata, N.16
Takeda, M.17
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12
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0029715114
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2V/100ns 1T/1C Nonvolatile Ferroelectric Memory Architecture with Bitline-Driven Read Scheme & Non-Relaxation Reference Cell
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to be published
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H.Hirano, et al., "2V/100ns 1T/1C Nonvolatile Ferroelectric Memory Architecture with Bitline-Driven Read Scheme & Non-Relaxation Reference Cell" Symp. VLSI Circuits, 1996, to be published.
-
(1996)
Symp. VLSI Circuits
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Hirano, H.1
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13
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0029703755
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A Microcontroller Embedded with 4Kbit Ferroelectric Non-Volatile Memory
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to be published
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T.Fukushima, et al., "A Microcontroller Embedded with 4Kbit Ferroelectric Non-Volatile Memory" Symp.VLSI Circuits, 1996, to be published.
-
(1996)
Symp.VLSI Circuits
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-
Fukushima, T.1
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