Preparation and characterization of a- and b-axes-oriented Bi 4Ti3O12 thin films using TiO2 anataze buffer layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 A, 2004, Pages 1449-1453

  Nakamura, Makoto ^a   Higuchi, Tohru ^a   Hachisu, Yuji ^a   Tsukamoto, Takeyo ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Bi4Ti3O12 (BIT); Interface; MOCVD; Remanent polarization (Pr); Thin film; TiO 2 buffer layer

Indexed keywords

BISMUTH COMPOUNDS; CRYSTALLIZATION; ELECTRODES; EVAPORATION; FERROELECTRIC CERAMICS; FERROELECTRICITY; GRAIN SIZE AND SHAPE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; SCANNING ELECTRON MICROSCOPY; SPUTTERING; TITANIUM DIOXIDE; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS; NONVOLATILE FERROELECTRIC MEMORY; OXIDIZING GASES; REMANENT POLARIZATION (PR);

THIN FILMS;

EID: 3042815954     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1449     Document Type: Article

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