Effect of thermal treatment of undoped Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 A, 2003, Pages 5687-5691

  Nakamura, Makoto ^a   Higuchi, Tohru ^a   Tsukamoto, Takeyo ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Bi4Ti3O12 (BIT); MOCVD; Postannealing; Thin film; Total gas flow rate

Indexed keywords

ANNEALING; ARGON; FLOW OF FLUIDS; MAGNETIC HYSTERESIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXYGEN; PLATINUM; POLARIZATION; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING SILICON; SILICA; TITANIUM;

COERCIVE FIELD; POSTANNEALING; REMANENT POLARIZATION; TOTAL GAS FLOW RATE;

THIN FILMS;

EID: 0344925569     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5687     Document Type: Article

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