Preparation of ferroelectric thin films using sol-gel solutions dissolved in supercritical carbon dioxide

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 4 B, 2003, Pages

  Kijima, Takeshi ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Bi4Ti3O12; Ferroelectric film; Sol gel solution; SrBi2 Ta2O9; Supercritical carbon dioxide

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; CARBON DIOXIDE; CRYSTALLIZATION; CURRENT DENSITY; LEAKAGE CURRENTS; MORPHOLOGY; SILICON; SOL-GELS; SOLUTIONS; SUBSTRATES; SURFACES;

CRYSTALLIZATION ANNEALING; LEAKAGE CURRENT DENSITY; REMNANT POLARIZATION; SUPERCRITICAL CARBON DIOXIDE;

FERROELECTRIC THIN FILMS;

EID: 0037932079     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l404     Document Type: Letter

References (2)

1. T. Kijima and H. Ishiwara: Jpn. J. Appl. Phys. 41 (2002) L716.
2. T. Kijima and H. Ishiwara: Jpn. J. Appl. Phys. 41 (2002) L1164.