Monte Carlo sensitivity analysis of CF 2 and CF radical densities in a c-C 4F 8 plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 6, 2004, Pages 2290-2298

  Bose, Deepak ^a   Rauf, Shahid ^b   Hash, D B ^a   Govindan, T R ^a   Meyyappan, M ^a  

^a NASA AMES RESEARCH CENTER   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC ETCHING; OCTACYCLOFLUOROBUTANE (C-C4F8); PLASMA CHEMISTRY MODELS; PLASMA REACTORS;

ADSORPTION; DIELECTRIC MATERIALS; DISSOCIATION; DRY ETCHING; IONIZATION; MONTE CARLO METHODS; PLASMAS; POLYMERIZATION; REACTION KINETICS; SEMICONDUCTOR DEVICE MANUFACTURE; SENSITIVITY ANALYSIS; SURFACE REACTIONS;

FLUORINE COMPOUNDS;

EID: 10244278040     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1795826     Document Type: Article

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