Effect of GaN buffer layer on crystallinity of InN grown on (1 1 1)GaAs

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1032-1036

  Guo, Qixin ^a   Okada, Akira ^a   Kidera, Hiroshige ^a   Tanaka, Tooru ^a   Nishio, Mitsuhiro ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

A1. Crystal structure; A1. High resolution X ray diffraction; A1. Reflection high energy electron diffraction; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CRYSTAL STRUCTURE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION;

BUFFER LAYERS; EPILAYERS;

FILM GROWTH;

EID: 0036531514     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02122-4     Document Type: Article

References (10)