Growth of GaN on GaAs(111)B by metalorganic hydrogen chloride VPE using double buffer layer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 9 A/B, 1997, Pages

  Takahashi, Naoyuki ^a   Matsuki, Shiroshi ^a   Koukitu, Akinori ^a   Seki, Hisashi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Double buffer layer; GaAs substrate; Gallium nitride; h GaN; Metalorganic hydrogen chloride VPE

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; FILM GROWTH; HIGH TEMPERATURE EFFECTS; HYDROGEN INORGANIC COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS; SUBSTRATES; X RAY ANALYSIS;

DOUBLE BUFFER LAYERS; FULL WIDTH AT HALF MAXIMUM (FWHM); GALLIUM NITRIDE; HYDROGEN CHLORIDE;

SEMICONDUCTING FILMS;

EID: 0031220419     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1133     Document Type: Article

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