Creating room temperature Ohmic contacts to 4H-SiC: Studied by specific contact resistance measurements and X-ray photoelectron spectroscopy

Surface Science

Volumn 573, Issue 2, 2004, Pages 253-263

  Guy, O J ^a   Pope, G ^a   Blackwood, I ^a   Teng, K S ^a   Chen, L ^a   Lee, W Y ^a   Wilks, S P ^a   Mawby, P A ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

Contact; Electrical transport measurements; Metal semiconductor interfaces; Nickel; Schottky Barrier; Silicon carbide; Suicides; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); METALLIZING; NICKEL; OHMIC CONTACTS; X RAY PHOTOELECTRON SPECTROSCOPY;

CIRCULAR TRANSFER LENGTH MEASUREMENTS (CTLM); ELECTRICAL TRANSPORT MEASUREMENTS; SCHOTTKY BARRIERS; SILICIDES;

SILICON CARBIDE;

EID: 10044252279     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.09.035     Document Type: Article

References (24)

1. J. Wan, M.A. Capano, M.R. Melloch, Solid-State Electron. 46 (8) (2002) 1227.
2. F. La Via, F. Roccaforte, V. Raineri, M. Mauceri, A. Ruggiero, P. Musumeci, L. Calcagno, A. Castaldini, A. Cavallini, Microelectron. Eng. 70 (2-4) (2003) 519.
3. G.S Marlow, M.D. Das, Solid-State Electron. 25 (2) (1982) 91.
4. S.S. Cohen, G.Sh. Gildenblat, Metal-semiconductor contacts and device, Academic Press, 1986, C4.
5. A. Kestle, S.P. Wilks, P.R. Dunstan, M. Pritchard, G. Pope, A. Koh, P.A. Mawby, Mater. Sci. Forum 338-342 (2000) 1025.
6. W.Y. Lee, Ph.D. Thesis, Chapters 6 and 7, University of Wales Swansea, UK, 2004.
7. S.Y. Han, J.-L. Lee, J. Electrochem. Soc. 149 (3) (2002) G189.
8. P. Colombi, E. Bontempi, U.M. Meotto, S. Porro, C. Ricciardi, L. Scaltrito, S. Ferrero, G. Richieri, L. Merlin, L.E. Depero, Mater. Sci. Eng. B, in press.
9. F. La Via, F. Roccaforte, A. Makhtari, V. Raineri, P. Musumeci, L. Calcagno, Microelectron. Eng. 60 (2002) 269-282.
10. W.Y. Lee, K.S. Teng, S.P. Wilks, Mater. Sci. Forum 457-460 (2004) 849.
11. A. Bachli, M.A. Nicolet, L. Baud, C. Jaussaud, R. Madar, Mater. Sci. Eng. B 56 (1998) 11.
12. C.S. Pai, C.M. Hanson, S.S. Lau, J. Appl. Phys. 57 (1985) 618.
13. L.D. Madsen, E.B. Svedburg, H.H. Radomson, Mater. Sci. Forum 264-268 (1998) 799.
14. K.N. Tu, J.W. Mayer, L.C. Feldman, Electronic Thin Film Science: for Electrical Engineers and Materials Scientists, Macmillan, New York, 1992.
15. E.G. Colgan, J.P. Gambino, B. Cunningham, Mater. Chem. Phys. 46 (1996) 209.
16. T. Nakamura, M. Satoh, Solid-State Electron. 46 (2002) 2063-2067.
17. R. Cheung, J. Hay, E. van der Drift, W. Gao, Solid-State Electron. 44 (11) (2000) 2081.
18. B. Pecz, Appl. Surf. Sci. 184 (2001) 287.
19. M.O. Aboelfotoh, J.P. Doyle, Phys. Rev. B 59 (1999) 10823.
20. T. Wimbauer, B.K. Meyer, A. Hofstaetter, A. Scharmann, H. Overhof, Phys. Rev. B 56 (1997) 7384.
21. L. Wenchang, Z. Kaiming, X. Xide, J. Phys. Condens. Matter 5 (1993) 891.
22. A.D. Smigelskas, E.O. Kirkendall, Trans. AMIE 171 (1947) 130.
23. Ts. Marinova, et al., Mater. Sci. Eng. B 46 (1997) 223.
24. P.H. Holloway, T.J. Kim, T.T. Trexler, S. Miller, J.J. Fijol, Proc. ISCSI-2 (1996) 362.