In-situ investigation of carbon reduction at Ni/4H-SiC interface using a silicon interlayer

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 849-852

  Lee, W Y ^a   Teng, K S ^a   Wilks, S P ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

4H SiC; Low Energy Electron Diffraction; Ni; Ni Si SiC; Ni SiC; Ni silicides; Si; X ray photoelectron spectroscopy

Indexed keywords

BINDING ENERGY; FERMI LEVEL; LOW ENERGY ELECTRON DIFFRACTION; NICKEL; OHMIC CONTACTS; SILICON CARBIDE; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

EPILAYERS; INTERDIFFUSION; LATTICE MISMATCH; POWER DEVICES;

SURFACE CHEMISTRY;

EID: 8744266421     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.849     Document Type: Conference Paper

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