Improvement of contact resistances on plasma-exposed silicon carbide

Solid-State Electronics

Volumn 44, Issue 11, 2000, Pages 2081-2083

  Cheung, R ^a   Hay, J ^a   Van Der Drift, E ^b   Gao, W ^c  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC RESISTANCE MEASUREMENT; MONOLAYERS; OHMIC CONTACTS; PLASMAS; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA-EXPOSED SILICON CARBIDES;

SILICON CARBIDE;

EID: 0034320917     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00155-6     Document Type: Article

References (5)

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3. 2) TiC ohmic contacts to n-type 6H α -SiC Appl Phys Lett. 66:1995;760-762.
4. Teraji T., Hara S., Okushi H., Kajimura K. Ideal ohmic contact to n-type 6H-SiC by reduction of Schottky barrier height. Appl Phys Lett. 71:1997;680-682.
5. 2 gas mixtures. J Appl Phys. 66:1989;2061-2068.