Nickel suicide thermal stability on polycrystalline and single crystalline silicon

Materials Chemistry and Physics

Volumn 46, Issue 2-3, 1996, Pages 209-214

  Colgan, E G ^a   Gambino, J P ^b   Cunningham, B ^b  

^a IBM RESEARCH   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Nickel silicide; Silicon; Thermal stability

Indexed keywords

ACTIVATION ENERGY; AGGLOMERATION; ANNEALING; ELECTRIC RESISTANCE MEASUREMENT; GRAIN GROWTH; POLYCRYSTALLINE MATERIALS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SUBSTRATES; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

NICKEL SILICIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030284340     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(97)80015-6     Document Type: Article

References (24)

1. A.H. Reader, A.H. van Ommen, P.J.W. Weijs, R.A.M. Wolters and D.J. Oostra, Rep. Prog. Phys., 56 (1993) 1397.
2. M.-A. Nicolet and S.S. Lau, in N.G, Einspruch and G.B. Larrabee (eds.), VLSI Electronics: Microstructure Science, Vol. 6, Ch. 6, Academic Press, New York, 1983.
3. S.P. Murarka, Silicides for VLSI Applications, Academic Press, New York, 1983.
4. F.M. d'Heurle and P. Gas, Kinetics of formation of suicides: A review, J. Mater. Res., 1 (1) (1986) 205.
5. K. Maex, Mater. Sci. Eng., R11 (3-4) (1993) 53.
6. J.B. Lasky, J.S. Nakos, O.J. Cain and P.J. Geiss, IEEE Trans. Electron Devices, 38 (2) (1991) 262.
7. E.G. Colgan, M. Mäenpää, M. Finetti and M.-A. Nicolet, J. Electron. Mater., 12 (2) (1983) 413.
8. T. Morimoto, T. Ohguro, H. Momose, T. Iinuma, I. Kunishima, K. Suguro, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata and H. Iwai, IEEE Trans. Electron Devices, 42 (1995) 915.
9. E.G. Colgan, J.P. Gambino and Q.Z. Hong, Mater. Sci. Eng. R, 16 (2) (1996) 43.
10. J.R. Phillips, P. Revesz, J.O. Olowolafe and J.W. Mayer, Mater. Res. Soc. Symp. Proc., 181 (1990) 159 and Mater. Res. Soc. Symp. Proc., 182 (1990) 57.
11. J.R. Phillips, P. Revesz, J.O. Olowolafe and J.W. Mayer, Mater. Res. Soc. Symp. Proc., 181 (1990) 159 and Mater. Res. Soc. Symp. Proc., 182 (1990) 57.
12. S. Nygren, D. Caffin, M. Östling and F.M. d'Heurle, Appl. Surf. Sci., 53 (1991) 87.
13. Q.Z. Hong, S.Q. Hong, F.M. D'Heurle and J.M.E. Harper, Thin Solid Films, 253 (1-2) (1994) 479.
14. S.S. Lau, J.W. Mayer and W. Tseng, in T.S. Moss and S.P. Keller (eds.), Handbook on Semiconductors: Materials Properties and Preparation, Vol. 3, Ch. 8, North Holland, Amsterdam, 1980.
15. S. Nygren and F.M. d'Heurle, Solid State Phenomena, 23/24 (1992) 81.
16. H. Jiang, C.M. Osburn, Z.G. Xiao, G. McGuire and G.A. Rozgonyi, J. Electrochem. Soc., 139 (1) (1992) 211.
17. L.H. Allen, K.N. Tu, L.C. Feldman and J.W. Mayer, Phys. Rev. B, 41 (1990) 8213.
18. E.G. Colgan, Thin Solid Films, 279 (1996) 193.
19. E.G. Colgan and F. d'Heurle, J. Appl. Phys., 79 (1996) 4087.
20. E.G. Colgan, C. Cabrai, Jr., L.A. Clevenger and J.M.E. Harper, Mater. Res. Soc. Symp. Proc., 387 (1995) 49; E.G. Colgan, C. Cabral, Jr., L.A. Clevenger and J.M.E. Harper, Mater. Res. Soc. Symp. Proc., 389 (1995) 321.
21. E.G. Colgan, C. Cabrai, Jr., L.A. Clevenger and J.M.E. Harper, Mater. Res. Soc. Symp. Proc., 387 (1995) 49; E.G. Colgan, C. Cabral, Jr., L.A. Clevenger and J.M.E. Harper, Mater. Res. Soc. Symp. Proc., 389 (1995) 321.
22. S. Nygren and S. Johansson, J. Appl. Phys., 68 (3) (1990) 1050.
23. W.J. Chen and L.J. Chen, J. Appl. Phys., 71 (1992) 657.
24. P. Revesz, L.R. Zheng, L.S. Hung and J.W. Mayer, Appl. Phys. Lett., 48 (1986) 1591.