Etching of 4H-SiC using a NF3 inductively coupled plasma

Journal of Electronic Materials

Volumn 33, Issue 11, 2004, Pages 1308-1312

  Kim, Byungwhan ^a   Lee, Byung Teak ^b  

^a Sejong University   (South Korea)

^b Chonnam National University   (South Korea)

Author keywords

Direct current (DC) bias; NF3; Plasma etching; Silicon carbide

Indexed keywords

INDUCTIVELY COUPLED PLASMA; LATTICE CONSTANTS; MAGNETIC ANISOTROPY; NITROGEN COMPOUNDS; PLASMA DENSITY; SILICON CARBIDE; SURFACE ROUGHNESS;

DIRECT-CURRENT (DC) BIAS; MULTIPOLAR MAGNETS; PROFILE ANGLES; SPATIAL UNIFORMITY;

ETCHING;

EID: 10044231635     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0158-y     Document Type: Conference Paper

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