Relationships between etch rate and roughness of plasma etched surface

IEEE Transactions on Plasma Science

Volumn 30, Issue 5 II, 2002, Pages 2074-2077

  Kim, Byungwhan ^a   Lee, Byung Teak ^b  

^a Sejong University   (South Korea)

^b Chonnam National University   (South Korea)

Author keywords

Atomic force microscopy (AFM); Dc bias; Etch rate; Silicon carbide; Surface roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC BREAKDOWN; ELECTRON CYCLOTRON RESONANCE; INDUCTIVELY COUPLED PLASMA; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

ETCH RATE; PLASMA ETCHED SURFACE; RADIO FREQUENCY SOURCE POWER;

SURFACE ROUGHNESS;

EID: 0036820228     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2002.807497     Document Type: Article

References (16)

1. P. H. Yih and A. J. Steckl, "Residue-free reactive ion etching of silicon carbide in fluorinated plasmas," J. Electrochem. Soc., vol. 142, no. 1, pp. 312-319, 1995.
2. 2 additive for device fabrication," J. Electrochem. Soc., vol. 143, no. 3, pp. 1037-1042, 1996.
3. M. Kothandaraman, D. Alok, and B. J. Baliga, "Reactive ion etching of trenches in 6H-SiC," J. Elect. Mater., vol. 25, no. 5, pp. 875-878, 1996.
4. 3 chemistries," J. Vac. Sci. Technol. A, vol. 16, no. 4, pp. 2204-2209, 1998.
5. 6-based gas mixtures," Appl. Phys. Lett., vol. 75, no. 15, pp. 2268-2270, 1999.
6. L. Cao, B. Li, and J. Zhao, "Etching of SiC inductively coupled plasma," J. Electrochem. Soc., vol. 145, no. 10, pp. 3609-3612, 1998.
7. S. Scharnholtz, E. Stein von Kamienski, A. Golz, C. Leonhard, and H. Kutz, "Dependence of channel mobility on the surface step orientation in planar 6H-SiC MOSFETS," Mater. Sci. Forum, vol. 264-268, pp. 1001-1004, 1998.
8. 2 plasmas," J. Electrochem. Soc., vol. 145, no. 4, pp. L58-L60, 1998.
9. 2 inductively coupled plasma," J. Vac. Sci. Technol. A, vol. 20, no. 2, pp. 424-429, 2002.
10. J. R. Flemish and K. Xie, "Profile and morphology control during etching of SiC using electron cyclotron resonant plasmas," J. Electrochem. Soc., vol. 143, no. 8, pp. 2620-2623, 1996.
11. x radical densities," J. Vac. Sci. Technol. A, vol. 19, no. 5, pp. 2272-2281, 2001.
12. X. Li, M. Schaepkens, G. S. Oehrlin, R. E. Ellefson, L. C. Frees, N. Mueller, and N. Korner, "Mass spectrometric measurements on inductively coupled fluorocarbon plasmas: Positive ions, radicals, and end-point detection," J. Vac. Sci. Technol. A, vol. 17, no. 5, pp. 2438-2446, 1999.
13. J. H. Kim, C. J. Kang, T. H. Ahn, and J. T. Moon, "Characteristics of self dc bias voltage and poly-si etching in pulsed helicon wave plasma," Thin Solid Films, 345, pp. 124-129, 1999.
14. P. Ho, J. E. Johannes, R. J. Buss, and E. Meeks, "Modeling the plasma chemistry of C2F6 and CHF3 etching of silicon dioxide, with comparisons to etch rate and diagnostic data," J. Vac. Sci. Technol. A, vol. 19, no. 5, pp. 2344-2360, 2001.
15. 3," J. Vac. Sci. Technol. A, vol. 14, no. 4, pp. 2004-2010, 1996.
16. 2 inductively coupled plasma using neural networks," J. Vac. Sci. Technol. A, vol. 20, no. 1, pp. 146-152, 2002.