Modeling SiC etching in C2F6/O2 inductively coupled plasma using neural networks

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 1, 2002, Pages 146-152

  Kim, Byungwhan ^a   Kong, Sung Min ^b   Lee, Byung Taek ^b  

^a Sejong University   (South Korea)

^b NONE   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ENERGY GAP; INDUCTIVELY COUPLED PLASMA; MATHEMATICAL MODELS; MEASUREMENT ERRORS; NEURAL NETWORKS; PLASMA DENSITY; PRESSURE EFFECTS; REACTIVE ION ETCHING;

ETCH ANISOTROPY; ION DENSITY; ION ENERGY;

SILICON CARBIDE;

EID: 0036164586     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1427882     Document Type: Article

References (18)