Reactive ion etching of vertical GaN mesas by the addition of CH4 to BCL3/H2/Ar inductively coupled plasma

Semiconductor Science and Technology

Volumn 16, Issue 6, 2001, Pages 471-473

  Lee, Byung Teak ^a   Jung, S Y ^a   Lee, J L ^b   Park, Y J ^c   Paek, M C ^d   Cho, K I ^d  

^a Chonnam National University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DEPOSITION; EROSION; INDUCTIVELY COUPLED PLASMA; MASKS; METHANE; POLYMERS; REACTIVE ION ETCHING;

SIDEWALL ANGLES; WET ETCHING;

GALLIUM NITRIDE;

EID: 0035362507     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/6/309     Document Type: Article

References (10)