Use of neural networks to model low-temperature tungsten etch characteristics in high density SF6 plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 417-422

  Kim, Byungwhan ^a   Sun, Jun Hyup ^b   Choi, Chang Ju ^b   Lee, Dong Duk ^b   Seol, Yeo Song ^b  

^a Chonnam National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CATALYST SELECTIVITY; CHUCKS; ELECTRIC POTENTIAL; ELECTRIC POWER SUPPLIES TO APPARATUS; EMISSION SPECTROSCOPY; MATHEMATICAL MODELS; NEURAL NETWORKS; PLASMA ETCHING; RATE CONSTANTS; SULFUR COMPOUNDS;

BIAS POWER; CHUCK HOLDER TEMPERATURE; FRACTIONAL FACTORIAL; HIGH DENSITY SULFUR HEXAFLUORIDE PLASMA; SOURCE POWER; TUNGSTEN ETCH PROCESS; UNIFORMITY MODELS;

TUNGSTEN;

EID: 0034156426     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582203     Document Type: Article

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