Proximity-controlled silicon carbide etching in inductively coupled plasma

Thin Solid Films

Volumn 434, Issue 1-2, 2003, Pages 276-282

  Kim, Byungwhan ^a   Kim, Sungmo ^a   Ann, Soo Chnag ^b   Lee, Byung Teak ^b  

^a Sejong University   (South Korea)

^b Chonnam National University   (South Korea)

Author keywords

Etching; Plasma processing deposition; Silicon carbide

Indexed keywords

INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; PLASMA DENSITY; PLASMA ETCHING; PLASMA SOURCES; SILICON WAFERS;

ETCH RATES;

SILICON CARBIDE;

EID: 0038243104     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00459-0     Document Type: Article

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