Reactive ion etching of 6H-SiC in SF6/O2 and CF4/O2 with N2 additive for device fabrication

Journal of the Electrochemical Society

Volumn 143, Issue 3, 1996, Pages 1037-1042

  Wolf, R ^a   Helbig, R ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; FABRICATION; NITROGEN; ORGANIC COMPOUNDS; OXIDATION; OXYGEN; PLASMAS; REACTIVE ION ETCHING; SOLID STATE DEVICES; SULFUR COMPOUNDS; SURFACES;

ANISTROPIC ETCHING; CARBON TETRAFLUORIDE; POLISHING DAMAGE REMOVAL; SULFUR HEXAFLUORIDE; SURFACE PREPARATION;

SILICON CARBIDE;

EID: 0030105132     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836578     Document Type: Article

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