Profile and morphology control during etching of SiC using electron cyclotron resonant plasmas

Journal of the Electrochemical Society

Volumn 143, Issue 8, 1996, Pages 2620-2623

  Flemish, J R ^a,b,c   Xie, K ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Anadigics Inc   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRIC FIELD EFFECTS; ELECTRON CYCLOTRON RESONANCE; ETCHING; MICROMACHINING; MORPHOLOGY; PLASMA APPLICATIONS; SUBSTRATES; SURFACE ROUGHNESS; SURFACE STRUCTURE; TEXTURES;

BIAS VOLTAGE; ELECTRON CYCLOTRON RESONANT PLASMAS; ETCHING ISOTROPY; JAGGED SIDEWALL FEATURES; MORPHOLOGY CONTROL; TRENCHES;

SILICON CARBIDE;

EID: 0030212637     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837058     Document Type: Article

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