Phase control of GaN on Si by nanoscale faceting in metalorganic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 2-8

  Lee, S C ^a   Sun, X Y ^a   Hersee, S D ^a   Brueck, S R J ^a  

^a MSC01 1070   (United States)

Author keywords

A1. Crystal structure; A1. Nanofaceting; A1. Phase transition; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

ANISOTROPY; CRYSTAL STRUCTURE; DEPOSITION; ETCHING; GALLIUM NITRIDE; LITHOGRAPHY; METALLORGANIC VAPOR PHASE EPITAXY; PHASE CONTROL; PHASE SEPARATION; PHASE TRANSITIONS; RAMAN SCATTERING; STRESS ANALYSIS;

INTERFEROMETRIC LITHOGRAPHY; LATERAL GROWTH; SPATIAL SEPARATION; WET ETCHING;

ALUMINUM;

EID: 10044228687     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.074     Document Type: Conference Paper

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