Electrical properties of SiO 2 films with embedded nanoparticles formed by SiH 4/O 2 chemical vapor deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2441-2447

  Rassel, R M ^a,b   Kim, T ^a,c   Shen, Z ^a,d   Campbell, S A ^a,d   McMurry, P H ^a,d  

^a UNIVERSITY OF MINNESOTA   (United States)

^b IBM MICROELECTRONICS   (United States)

^c SEAGATE TECHNOLOGY   (United States)

^d Department of Electrical Engineering ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL FILM MEASUREMENTS; EMBEDDED PARTICLES;

AEROSOLS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; MASS SPECTROMETERS; NANOSTRUCTURED MATERIALS; OXYGEN; PARTICLE SIZE ANALYSIS; PASSIVATION; PERMITTIVITY; SILANES; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

SILICA;

EID: 0942288902     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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