C-V and G-V measurements showing single electron trapping in nanocrystalline silicon dot embedded in MOS memory structure

Materials Research Society Symposium - Proceedings

Volumn 686, Issue , 2002, Pages 209-214

  Huang, Shaoyun ^a   Banerjee, Souri ^a   Oda, Shunri ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ELECTRIC FIELD EFFECTS; ELECTRON TRAPS; ELECTRON TUNNELING; MOS CAPACITORS; PROBABILITY; SILICA;

THERMAL ACTIVATION;

NANOSTRUCTURED MATERIALS;

EID: 0036349388     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)