Charge storage mechanism in nano-crystalline Si based single-electron memories

Materials Research Society Symposium - Proceedings

Volumn 638, Issue , 2001, Pages

  Hinds, Bruce J ^a   Yamanaka, Takayuki ^a   Oda, Shunri ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BOUNDARY CONDITIONS; CARRIER CONCENTRATION; ELECTRIC CHARGE; ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; GATES (TRANSISTOR); GROUND STATE; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POISSON DISTRIBUTION; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR STORAGE; SILICON ON INSULATOR TECHNOLOGY;

SINGLE-ELECTRON MEMORIES;

ELECTRON DEVICES;

EID: 0035559610     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)