Ultra Fast Write Speed, Long Refresh Time, Low Power F-N Operated Volatile Memory Cell with Stacked Nanocrystalline Si Film

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 515-518

  Shen, Shih Jye ^a   Lin, Chrong Jung ^a   Hsu, Charles Ching Hsiang ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; NANOCRYSTALLINE SILICON; NONVOLATILE STORAGE; THRESHOLD VOLTAGE; CMOS INTEGRATED CIRCUITS; ELECTRON TUNNELING; NANOSTRUCTURED MATERIALS; RANDOM ACCESS STORAGE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

LOW POWER; MEMORY CELL; MEMORY STRUCTURE; NANOCRYSTALLINE SI; NANOCRYSTALLINE SI FILMS; REFRESH TIME; SI LAYER; ULTRA-FAST; VOLATILE MEMORY; WRITE SPEED;

NANOCRYSTALS; SEMICONDUCTOR STORAGE;

FLOATING GATE STRUCTURE; NANOCRYSTALLINE SILICON FILM; THRESHOLD VOLTAGE; VOLATILE MEMORY;

EID: 0030403763     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553856     Document Type: Conference Paper

References (7)

1. H.Watanabe, T.Tatsumi, S.Ohnishi, T.Hamada, I.Honma, and T.Kikkawa, “A New Cylindrical Capacitor Using Hemispherical Grained Si (HSG-Si) for 256Mb DRAMs,” in IEDM Tech. Dig., p.259-263, 1992
2. Y.Ohji, Y.Matsui, T.Itoga, M,Hirayama, Y.Sugawara, K.Torii, H.Miki,M. Nakata, I. Asamo, S.Iijima,and Y.Kawamoto,“Ta2O5 capacitors‘dielectric material for Giga-bit DRAMs,” in IEDM Tech. Dig., p. 111-114, 1995
3. A.Yuuki, M.Yamamuka, T.Makita, T.Horikawa, T.Shibano, N.Hirano, H.Maeda, N Mikami, K.Ono, H.Ogata, and H.Abe, “Novel Stacked Capacitor Technology for 1 Gbit DRAMs with CVD-(Ba,Sr)TiO3, Thin Films on a Thick Storage Node of Ru,” in IEDM Tech. Dig., p.115-118, 1995
4. C.H.-J.Wann, and C.Hu, “High Endurance Ultra-Thin Tunnel Oxide for Dynamic Memory Application,” in IEDM Tech. Dig.. p.867-870, 1995
5. S.Tiwari, F.Rana, K.Chan, H.Hanafi, W.Chen, and D.Buchanan, “Volatile and Non-Volatile Memories in Silicon with Nano-Crystal Storage”, in IEDM Tech. Dig., p.521-524, 1995
6. C.-J . Lin, C.C.-H.Hsu, G.Hong, H.-H.Chen, and L.S.Lu, “Enhanced Tunneling Characteristics of PECVD Silicon-Rich-Oxide (SRO) for the Application in Low Voltage Flash EEPROM,’in IEEE Trans. on Electron. Device.Vol.43,No. 11, Nov., 1996
7. D.J.DiMaria, D.W.Dong, F.L.Pesavento,C.Lam, and S.D.Brorson, “Enhanced conduction and minimized charge trapping in electrically alterable read-only memories using off-stoichiometric silicon dioxide films,”J.Appl. Phys., Vol. 51, p.2722-2735,1980