High speed F-N operated volatile memory cell with stacked plasma enhanced chemical vapor deposition (PECVD) nanocrystalline Si layer structure

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 12 SUPPL. B, 1998, Pages

  Shen, Shih Jye ^a   Lin, Chrong Jung ^a,b   Hsu, Charles Ching Hsiang ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Dynamic random access memory; Fowler Nordheim tunneling; Nanocrystalline; Quantum confinement; Stacked gate memory; Volatile memory

Indexed keywords

CHARGE TRANSFER; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON TUNNELING; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; THIN FILMS;

FOWLER-NORDHEIM TUNNELING; QUANTUM CONFINEMENT; VOLATILE MEMORY CELLS;

SEMICONDUCTOR STORAGE;

EID: 0032300677     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1517     Document Type: Article

References (13)

1. H. Watanabe, T. Tatsumi, S. Ohnishi, T. Hamada, I. Honma and T. Kikkawa: IEEE IEDM Tech. Dig. (1992) p. 259.
2. Y. Ohji, Y. Matsui, T. Itoga, M. Hirayama, Y. Sugawara, K. Torii, H. Miki, M. Nakata, I. Asano, S. Iijima and Y. Kawamoto: IEEE IEDM Tech. Dig. (1995) p. 111.
3. A. Yuuki, M. Yamamuka, T. Makita, T. Horikawa, T. Shibano, N. Hirano, H. Maeda, N. Mikami, K. Ono, H. Ogata and H. Abe: IEEE IEDM Tech. Dig. (1995) p. 115.
4. C. H.-J. Wann and C. Hu: IEEE IEDM Tech. Dig. (1995) p. 867.
5. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chen and D. Buchanan: IEEE IEDM Tech. Dig. (1995) p. 521.
6. H. I. Hanafi, S. Tiwari and I. Khan: IEEE Trans. on Electron Device 43 (1996) 1553.
7. H. I. Hanafi, S. Tiwari, S. Burns, W. Kocon, A. Thomas, N. Garg and K. Matsushita: IEEE IEDM Tech. Dig. (1995) p. 657.
8. D. J. DiMaria, K. M. DeMeyer, C. M. Seerano and D. W. Dong: J. Appl. Phys. 52 (1981) 4825.
9. D. J. DiMaria, D. W. Dong, F. L. Pesavento, C. Lam and S. D. Brorson: J. Appl. Phys. 55 (1984) 3000.
10. K. T. Chang and K. Rose: Appl. Phys. Lett. 49 (1986) 868.
11. C.-J. Lin, C. C.-H. Hsu, G. Hong, H.-H. Chen and L. S. Lu: IEEE Trans. Electron. Device 43 (1996) 2021.
12. B. H. Augustine, E. A. Irene, Y. J. He, K. J. Price, L. E. McNeil, K. N. Christensen and D. M. Maher: J. Appl. Phys. 78 (1995) 4020.
13. Maiti and J. C. Lee: IEEE Electron Device Lett. 13 (1992) 624.