Temperature and frequency dependencies of charging and discharging properties in MOS memory based on nanocrystalline silicon dot

Materials Research Society Symposium - Proceedings

Volumn 715, Issue , 2002, Pages 769-774

  Huang, Shaoyun ^a   Banerjee, Souri ^a   Oda, Shunri ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); MOS DEVICES; SANDWICH STRUCTURES; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE CHARACTERISTICS; CONDUCTANCE VOLTAGE CHARACTERISTICS; NANOCRYSTALLINE SILICON DOT;

NANOSTRUCTURED MATERIALS;

EID: 0036924527     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-715-a12.5     Document Type: Conference Paper

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