Investigating the nature of Si doping in Al0.23Ga 0.77N

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 426-429

  James, G R ^a   Leitch, A W R ^a   Wagener, M C ^b   Omnes F ^b  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

^b CRHEA CNRS   (France)

Author keywords

AlGaN; Hall effect; Photoluminescence; Silicon doping

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; ELECTRON TRANSITIONS; HALL EFFECT; HETEROJUNCTIONS; OPTICAL SYSTEMS; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

MASS THEORY; MOTT TRANSITION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0347316558     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.057     Document Type: Conference Paper

References (21)

1. Asif Khan M., Shur M.S., Kuznia J.N., Chen Q., Burn J., Schaff W. Appl. Phys. Lett. 66:1996;1083.
2. Monroy E., Omnès F., Calle F. Semicond. Sci. Technol. 18:2003;R33.
3. Asif Khan M., Chen Q., Sun C.J., Yang J.W., Shur M.S., Park H. Appl. Phys. Lett. 68:1996;514.
4. Polyakov A.Y., Smirnov N.B., Govorkov A.V., Mil'vidskii M.G., Redwing J.M., Shin M., Skowronski M., Greve D.W., Wilson R.G. Solid-State Electron. 42:1998;627.
5. Ahoujja M., McFall J.L., Yeo Y.K., Hengehold R.L., Van Nostrand J.E. Mater. Sci. Eng. B. 91-92:2002;285.
6. Ahoujja M., Yeo Y.K., Hengehold R.L., Van Nostrand J.E. Appl. Phys. Lett. 80:2002;1382.
7. Katsuragawa M., Sota S., Komori M., Anbe C., Takechi T., Sakai H., Amano H., Akasaki I. J. Cryst. Growth. 189/190:1998;528.
8. Nam K.B., Li J., Nakami M.L., Jiang H.X. Appl. Phys. Lett. 81:2002;1038.
9. Lee C.-R. J. Cryst. Growth. 246:2002;25.
10. Blakemore J.S. Solid State Physics. 1985;Cambridge University Press, Cambridge. , p. 344.
11. Omnès F., Marenco N., Beaumont B., de Miery Ph. J. Appl. Phys. 86:1999;5286.
12. G.R. James, A.W.R. Leitch, M.C. Wagener, F. Omnès, M. Leroux, J. Appl. Phys., submitted for publication.
13. Look D.C., Molnar R.J. Appl. Phys. Lett. 70:1997;3377.
14. Look D.C. Electrical Characterization of GaAs Materials and Devices. 1989;Wiley, New York. , p. 93.
15. Steude G., Meyer B.K., Gölder A., Hoffmann A., Bertram F., Christen J., Amano H., Akasaki I. Appl. Phys. Lett. 74:1999;2456.
16. Moore W.J., Freitas J.A., Lee S.K., Park S.S., Han J.Y. Phys. Rev. B. 65:2002;. R 081201.
17. Wagener M.C., James G.R., Omnès F. Appl. Phys. Lett. 83:2003;4193.
18. Meyer B.K., Volm D., Graber A., Alt H.C., Detchprohm T., Amano A., Akasaki I. Solid State Commun. 95:1995;597.
19. Leroux M., Dalmasso S., Natali F., Helen S., Touzi C., Laügt S., Passerel M., Omnès F., Semond F., Massies J., Gibart P. Phys. Stat. Sol. (b). 234:2002;887.
20. Leroux M., Beaumont B., Grandjean N., Lorenzini P., Haffouz S., Vennéguès P., Massies J., Gibart P. Mater. Sci. Eng. B. 50:1997;97.
21. Yoshikawa M., Kunzer M., Wagner J., Obloh H., Schlotter P., Schimdt R., Herres N., Kaufmann U. J. Appl. Phys. 86:1999;4400.