N-type doping behavior of A10.15Ga0.85N:Si with various Si incorporations

Journal of Crystal Growth

Volumn 246, Issue 1-2, 2002, Pages 25-30

  Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

Author keywords

A1. CL; A3. Metalorganic chemical vapor deposition; B1. ALGaN:Si; B1. n ALGaN

Indexed keywords

CRACKS; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; LUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; SURFACE PROPERTIES;

BAND TRANSITION;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0036888382     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01789-X     Document Type: Article

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