Temperature-dependent Hall measurements of molecular beam epitaxial grown Si-doped AlxGa1-xN for Al mole fraction up to 0.5

Applied Physics Letters

Volumn 80, Issue 8, 2002, Pages 1382-1384

  Ahoujja, M ^a   Yeo, Y K ^a   Hengehold, R L ^a   Van Nostrand, J E ^b  

^a AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAS-SOURCE MBE; HALL EFFECT MEASUREMENT; HALL MEASUREMENTS; INTERFACIAL LAYER; MOLE FRACTION; MOLECULAR BEAM EPITAXIAL; SAPPHIRE SUBSTRATES; TEMPERATURE DEPENDENT;

ELECTRIC PROPERTIES; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM; GAS SOURCE MOLECULAR BEAM EPITAXY; METALLIC FILMS; SAPPHIRE; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

ALUMINUM;

EID: 79956046758     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1452795     Document Type: Article

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