Hole trap generation in gate dielectric during substrate hole injection

Semiconductor Science and Technology

Volumn 19, Issue 1, 2004, Pages

  Zhang, J F ^a   Sii, H K ^a   Chen, A H ^a   Zhao, C Z ^a   Uren, M J ^b   Groeseneken, G ^c   Degraeve, R ^c  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b QINETIQ   (United Kingdom)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIELECTRIC MATERIALS; HOLE TRAPS; HYDROGEN; INTERFACES (MATERIALS); KINETIC THEORY; MOSFET DEVICES; NITROGEN COMPOUNDS; STRESSES; THERMAL EFFECTS;

DRAIN CURRENTS; ELECTRICAL STRESS; HOLE INJECTION;

GATES (TRANSISTOR);

EID: 0347128070     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/1/L01     Document Type: Article

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