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Volumn 39, Issue 1, 1999, Pages 3-14

Recent advances in the theory of oxide-semiconductor interfaces

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES OF SOLIDS; INTERFACES (MATERIALS); OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0032685812     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00205-4     Document Type: Article
Times cited : (12)

References (62)
  • 57
    • 0032097083 scopus 로고    scopus 로고
    • Boron diffusion in silicon oxides and oxynitrides
    • Ellis KA, Buhrman RA. Boron diffusion in silicon oxides and oxynitrides. J Electrochem Soc 1998;145:2068.
    • (1998) J Electrochem Soc , vol.145 , pp. 2068
    • Ellis, K.A.1    Buhrman, R.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.