Ion beam synthesis based formation of Ge-rich thermally grown silicon dioxide layers: A promising approach for a silicon-based light emitter

Materials Research Society Symposium - Proceedings

Volumn 638, Issue , 2001, Pages

  Gebel, T ^a   Rebohle, L ^a   Zhao, J ^a   Borchert, D ^a   Frob H ^a   Borany, J V ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; ELECTROLUMINESCENCE; ENERGY EFFICIENCY; INTEGRATED OPTOELECTRONICS; ION BEAMS; LIGHT EMISSION; SEMICONDUCTING GERMANIUM; SYNTHESIS (CHEMICAL);

POWER EFFICIENCY;

SILICA;

EID: 0035557469     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)