Temperature dependence of the breakdown voltage for reverse-biased GaN p-n-n+ diodes

Solid State Communications

Volumn 117, Issue 9, 2001, Pages 549-553

  Aggarwal, R L ^a   Melngailis, I ^a   Verghese, S ^a   Molnar, R J ^a   Geis, M W ^a   Mahoney, L J ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; IMPACT IONIZATION; PHONONS; THERMAL EFFECTS;

CARRIER SCATTERING;

SEMICONDUCTOR DIODES;

EID: 0035250755     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00513-5     Document Type: Article

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