Defect clusters in silicon: Impact on the performance of large-area devices

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 527-534

  Sopori, Bhushan L ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Defect clusters; Dislocations; Solar cells

Indexed keywords

AGGLOMERATION; CRYSTAL GROWTH; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; PRECIPITATION (CHEMICAL); STACKING FAULTS; THERMAL STRESS;

DEFECT CLUSTERS;

SILICON SOLAR CELLS;

EID: 3743063670     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.527     Document Type: Article

References (8)

1. B. L. Sopori, Solar Cells, 1,237(1980).
2. PVSCAN5000 is a commercial instrument available from Labsphere for analysis of defects in semiconductor substrates.
3. S. M. Sze, Physics of Semiconductor Devices, John Wiley, New York, 1981.
4. Howard C. Card and Edward S. Yang, IEEE Trans. ED -24, 397(1977).
5. Jerry G. Fossum and Fredrik A. Lindholm, IEEE Trans. ED-27, 692(1980).
6. B. L. Sopori, Appl. Phys. Lett., 53, 1780(1988).
7. B. L. Sopori and R. Murphy, "A Model for an Inhomogeneous Solar Cell," Procd. PVSEC, 1995.
8. R. Murphy, B. L. Sopori, and D. Rose, MRS Procd., 378, 749(1995).