Growth of 1-μm-thick continuous β-FeSi2 films on abraded p+-Si(001) substrates by RF-magnetron sputtering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 A, 2003, Pages 5490-5493

  Momose, Noritaka ^a   Hashimoto, Yoshio ^a   Ito, Kentaro ^a  

^a SHINSHU UNIVERSITY   (Japan)

Author keywords

Abraded substrate; Continuous film; Indium tin oxide capping layer; Scanning electron microscopy; Sealed quartz ampule; Vacuum annealing; X ray diffraction; FeSi2

Indexed keywords

ABRASION; ADHESION; ANNEALING; MAGNETRON SPUTTERING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SPUTTER DEPOSITION; THICK FILMS; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

ABRADED SUBSTRATE; INDIUM TIN OXIDE CAPPING LAYER; IRON SILICON FILMS; SEALED QUARTZ AMPULE; VACUUM ANNEALING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0344494570     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5490     Document Type: Article

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