Synthesis and properties of semiconducting iron disilicide β-FeSi2

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 A, 1999, Pages 5192-5199

  Kakemoto, Hirofumi ^a   Marita, Yunosuke ^b   Sakuragi, Shiro ^c   Tsukamoto, Takeyo ^d  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b Union Material Inc   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Band gap; Electron phonon interaction; Raman scattering; SEM; XRD; fesi2 bulk crystal; fesi2 film

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; IRON COMPOUNDS; LASER ABLATION; LIGHT EXTINCTION; PERMITTIVITY; PHONONS; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SYNTHESIS (CHEMICAL);

EXTINCTION COEFFICIENT; IRON DISILICIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033321217     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5192     Document Type: Article

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