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Volumn 38, Issue 2 A, 1999, Pages 781-786

Optical and electrical properties of β-FeSi2/Si, β-FeSi2/InP Heterojunction prepared by RF-sputtering deposition

Author keywords

Open circuit photovoltage; Optical absorption; Photoelectric yield; RF sputtering; Short circuit photocurrent density; X ray diffraction; FeSi2

Indexed keywords


EID: 0000415627     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.781     Document Type: Article
Times cited : (22)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.