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Volumn 38, Issue 2 A, 1999, Pages 781-786
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Optical and electrical properties of β-FeSi2/Si, β-FeSi2/InP Heterojunction prepared by RF-sputtering deposition
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Author keywords
Open circuit photovoltage; Optical absorption; Photoelectric yield; RF sputtering; Short circuit photocurrent density; X ray diffraction; FeSi2
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Indexed keywords
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EID: 0000415627
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.38.781 Document Type: Article |
Times cited : (22)
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References (21)
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