Ion-beam synthesized semiconducting β-FeSi2 controlled by annealing procedures and phase-transitions

Materials Research Society Symposium - Proceedings

Volumn 486, Issue , 1998, Pages 329-334

  Maeda, Y ^a   Fujita, T ^a   Akita, T ^a   Umezawa, K ^a   Miyake, K ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; ION IMPLANTATION; IRON COMPOUNDS; OPTICAL PROPERTIES; PHASE TRANSITIONS; PRECIPITATION (CHEMICAL); RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS;

ION BEAM SYNTHESIS; SEMICONDUCTING SILICIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031624763     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)