Good ferroelectricity of Pb(Zr,Ti)O3 thin films fabricated by highly reproducible deposition on bottom Ir electrode at 395°C

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 9 AB, 2003, Pages

  Asano, Gouji ^a   Oikawa, Takahiro ^a   Funakubo, Hiroshi ^a   Saito, Keisuke ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b PANalytical   (Japan)

Author keywords

Ferroelectricity; Ir; Low temperature deposition; Pulsed MOCVD; PZT; X ray reciprocal space mapping

Indexed keywords

DEPOSITION; ELECTRODES; FERROELECTRICITY; FILM PREPARATION; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

DEPOSITION PRESSURE; HIGHLY REPRODUCIBLE DEPOSITION; REMANENT POLARIZATION; X RAY RECIPROCAL SPACE MAPPING MEASUREMENT;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 0344494090     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1083     Document Type: Letter

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