Y2O3-stabilized ZrO2 thin films prepared by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 11, 1998, Pages 6229-6232

  Matsuzaki, Tomokazu ^a   Okuda, Norikazu ^a   Shinozaki, Kazuo ^a   Mizutani, Nobuyasu ^a   Funakubo, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Activation energy; Deposition mechanism; Deposition rate; MOCVD; YSZ

Indexed keywords

ACTIVATION ENERGY; CRYSTALLINE MATERIALS; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR STRUCTURE; PARTIAL PRESSURE; PRESSURE CONTROL; REACTION KINETICS; SUBSTRATES; THIN FILMS; YTTRIUM COMPOUNDS;

YTTRIA;

ZIRCONIA;

EID: 0032204048     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6229     Document Type: Article

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