Material properties of heteroepitaxial Ir and Pb(ZrxTi1-x)O3 films on (100)(ZrO2)1-x(Y2O3) x/(100)Si structure prepared by sputtering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 9 PART B, 1998, Pages 5141-5144

  Horita, Susumu ^a   Horii, Sadayoshi ^a,b   Umemoto, Shinya ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b HITACHI KOKUSAI ELECTRIC INC   (Japan)

Author keywords

Epitaxy; Ferroelectricity; Heteroepitaxial; Ir; PZT; Reactive sputtering; Si; YSZ

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FILM PREPARATION; HYSTERESIS; IRIDIUM; LEAD COMPOUNDS; POLARIZATION; SILICON; SPUTTER DEPOSITION; X RAY DIFFRACTION ANALYSIS; ZIRCONIUM COMPOUNDS;

HETEROEPITAXIAL FILM; REACTIVE SPUTTERING;

DIELECTRIC FILMS;

EID: 0032155577     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5141     Document Type: Article

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