Microstructure and properties of PbZr1-xTixO3 thin films made by one and two step metalorganic chemical vapor deposition

Integrated Ferroelectrics

Volumn 18, Issue 1-4, 1997, Pages 155-169

  Li, Tingkai ^a   Zawadzki, Pete ^a   Stall, Rick A ^a  

^a EMCORE Corporation   (United States)

Author keywords

Ferroelectrics; MOCVD; PZT; Thin film

Indexed keywords

FERROELECTRIC MATERIALS; GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; NUCLEATION; PERMITTIVITY; PLATINUM; SEMICONDUCTING LEAD COMPOUNDS; SILICON WAFERS; SURFACE ROUGHNESS; THIN FILMS;

FERROELECTRIC FILM; FERROELECTRIC PROPERTY; LEAD ZIRCONIUM TITANATE; PHASE FORMATION;

DIELECTRIC FILMS;

EID: 0031375692     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708221696     Document Type: Article

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