Low temperature deposition of Pb(Zr,Ti)O3 film by source gas pulse-introduced metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 4 A, 2001, Pages

  Aratani, M ^a   Ozeki, T ^a   Funakubo, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Buffer layer; Continuous MOCVD; Ferroelectricity; Low temperature deposition; MOCVD; Pulse MOCVD; PZT

Indexed keywords

CURRENT DENSITY; FERROELECTRICITY; GASES; LEAD COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; SOL-GELS; SPUTTERING; SUBSTRATES;

LOW TEMPERATURE DEPOSITION;

THIN FILMS;

EID: 0035302377     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l343     Document Type: Article

References (10)