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Volumn 16, Issue 12, 2001, Pages 3583-3591

Metalorganic chemical vapor deposition of very thin Pb(Zr, Ti)O3 thin films at low temperatures for high-density ferroelectric memory applications

(8) Kim, Hye Ryoung a Jeong, Seehwa a Jeon, Chung Bae a Kwon, Oh Seong a Hwang, Cheol Seong a Han, Young Ki b Yang, Doo Young b Oh, Ki Young b

a Seoul National University (South Korea)

b Jusung Engineering Company Limited (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; FERROELECTRIC MATERIALS; GRAIN SIZE AND SHAPE; LEAD COMPOUNDS; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; RANDOM ACCESS STORAGE; SOL-GELS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

X-RAY FLUORESCENCE SPECTROSCOPY (XRF);

THIN FILMS;

EID: 0035739518 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.2001.0491 Document Type: Article

Times cited : (34)

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