Low-temperature fabrication of Ir/Pb(Zr, Ti)O3/Ir capacitors solely by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 B, 2001, Pages 5551-5553

  Fujisawa, H ^a   Kita, K ^a   Shimizu, M ^a   Niu, H ^a  

^a UNIVERSITY OF HYOGO   (Japan)

Author keywords

Ir electrode; Low temperature growth; MOCVD; Pb(Zr, Ti)O3 thin film

Indexed keywords

ASPECT RATIO; CAPACITORS; ELECTRODES; FERROELECTRIC THIN FILMS; FILM PREPARATION; LOW TEMPERATURE EFFECTS; MAGNETIC HYSTERESIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PEROVSKITE; POLARIZATION;

HYSTERESIS LOOPS; LEAD ZIRCONATE TITANATE (PZT) THIN FILMS;

THIN FILM DEVICES;

EID: 0035455510     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.5551     Document Type: Article

References (16)