Improvement of property of Pb(Zrx Ti1-x)O3 thin film prepared by source gas pulse-introduced metalorganic chemical vapor deposition

Japanese journal of applied physics

Volumn 39, Issue 10 A, 2000, Pages

  Nagashima, Kuniharu ^a   Aratani, Masanori ^a   Funakubo, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FORCE; CRYSTAL ORIENTATION; ELECTRIC FIELDS; ELECTRIC PROPERTIES; GASES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIXTURES; POLARIZATION; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS; ZIRCONIUM;

CRYSTALLINITY; POLARIZATION ELECTRIC FIELD HYSTERESIS LOOP; REACTION CHAMBER; REMANENT POLARIZATION; SOURCE GAS PULSE;

LEAD COMPOUNDS;

EID: 0034290924     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l996     Document Type: Article

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