Role of non-180° domain switching in electrical properties of Pb(Zr0.35,Ti0.65)O3 thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 11 B, 2002, Pages 6730-6734

  Saito, Keisuke ^a   Oikawa, Takahiro ^b   Kurosawa, Toshiyuki ^a   Akai, Takao ^a   Funakubo, Hiroshi ^b  

^a Philips Analyt Applic Lab Japan   (Japan)

^b Tokyo Institute of Technology ^*  (Japan)

Author keywords

Domain; Lead zirconate titanate; MOCVD; Pb(Zr,Ti)O3 (PZT); Reciprocal space mapping; X ray diffraction (XRD)

Indexed keywords

ELECTRIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON; SUBSTRATES; SWITCHING; THERMAL EFFECTS; X RAY ANALYSIS;

DOMAIN; LEAD ZIRCONATE TITANATE; RECIPROCAL SPACE MAPPING; X-RAY DIFFRACTION (XRD);

THIN FILMS;

EID: 0037568561     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.6730     Document Type: Article

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