Nanostructure of near-surface Si layers formed by implantation and pulsed laser annealing

Journal of Alloys and Compounds

Volumn 362, Issue 1-2, 2004, Pages 282-286

  Klinger, D ^a   Auleytner, J ^a   Zymierska, D ^a   Nowicki, L ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

Author keywords

Amorphous materials; Crystal growth; Laser processing; Nanostructures; Semiconductors; Thermal analysis

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CRYSTAL GROWTH; ION IMPLANTATION; LASER PULSES; MELTING; NANOSTRUCTURED MATERIALS; PULSED LASER APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS; SOLIDIFICATION; THERMOANALYSIS;

DEFECT STRUCTURE; LASER PROCESSING;

SILICON;

EID: 0344035236     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(03)00599-1     Document Type: Conference Paper

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