Lateral solid phase recrystallization from the crystal seed in Ge-ion-implanted amorphous silicon films by repetition rapid thermal annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 A, 2001, Pages 2150-2154

  Seo, Jin Wook ^a   Kokubo, Yoshitaka ^a   Aya, Yoichiro ^b   Nohda, Tomoyuki ^b   Hamada, Hiroki ^b   Kuwano, Hiroshi ^a  

^a KEIO UNIVERSITY   (Japan)

^b SANYO ELECTRIC CO LTD   (Japan)

Author keywords

Crystal seed; Excimer laser annealing; Lateral solid phase recrystallization; Repetition rapid thermal annealing; Single rapid thermal annealing

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; EXCIMER LASERS; ION IMPLANTATION; NUCLEATION; RAPID THERMAL ANNEALING; SEMICONDUCTING GERMANIUM; SUBSTRATES; THERMAL EFFECTS; THIN FILM TRANSISTORS;

LATERAL SOLID PHASE RECRYSTALIZATION (LSPR); LOW PRESSURE CHEMICAL VAPOUR DEPOSITION (LPCVD);

RECRYSTALLIZATION (METALLURGY);

EID: 0035302156     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2150     Document Type: Article

References (9)