Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Journal of Applied Physics

Volumn 88, Issue 3, 2000, Pages 1312-1318

  Wong Leung, J ^a   Fatima, S ^a   Jagadish, C ^a   Fitz Gerald, J D ^a   Chou, C T ^b   Zou, J ^d   Cockayne, D J H ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b Pacific Solar Pty Ltd   (Australia)

^c UNIVERSITY OF OXFORD   (United Kingdom)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012022111     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373819     Document Type: Article

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